GaN & SiC Deposition | Atomic Precision Systems

GaN & SiC Process Chemistries

Low Temperature, Hazard Free High Band-Gap Semiconductors

Deposit GaN or SiC on Sapphire, Silicon, Plastic and More with Atomic Precision Custom Chemistries

LED Process Chemistries Photo by Jusin Lane

Gallium Nitride (GaN)

Never hear from EH&S again.

Gallium Nitride (GaN) is a critical material for LEDs, Power MOSFETs, HMETs, and MESFETs. Traditional deposition techniques such Vapor Phase Epitaxy require high temperatures (>1500 C) or require high flows of ammonia and pyrophoric metalorganics such as in MOCVD. Atomic Precision has developed patented GaN chemistries that avoid the use of expensive, pyrophoric chemicals such as Trimethylgallium (TMG) and Ammonia in favor of stable, low-temperature chemicals with wide availability. A clean, low-cost, low-temperature chemistry without the storage of hazardous materials? Atomic Precision has found the answer.

Silicon Carbide (SiC)

Lowest Process Temperatures on the Planet

Silicon Carbide (SiC) has been identified as one of the most important materials in the next 20 years. From high band-gap semiconducting power electronics to tribological coatings, SiC is one of the most versatile materials on the planet. The problem? It requires >1000 deg C to deposit. Atomic Precision Systems has developed the world's first low-temperature SiC deposition process, capable of depositing a-SiC on plastic at room temperature or 6H-SiC on silicon at less than 600 C.

Atomic Precision is looking for industrial partners and strategic investment to bring GaN and SiC to market.

Interested in working together?