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GaN & SiC Deposition Services

Low Temperature, Hazard Free High Band-Gap Semiconductors

Deposit GaN or SiC on Sapphire, Silicon, and More with Atomic Precision Custom Chemistries

Gallium Nitride​ (GaN)

Never hear from EH&S again.

Gallium Nitride (GaN) is a critical material for LEDs, Power MOSFETs, HMETs, and MESFETs, but requires high temperatures for MVPE, or requires tons of Ammonia and pyrophoric Metalorganics in MOCVD. Atomic Precision has developed custom GaN chemistries that remove the use of pyrophores such as TMG as Ammonia. A clean, green chemistry without the storage of hazardous materials.

 

Silicon Carbide (SiC)

Lowest Process Temperatures on the Planet

Silicon Carbide (SiC) has been identified as one of the most important materials in the next 20 years. From high band-gap semiconducting power electronics to tribological coatings, SiC is one of the most versatile materials on the planet. The problem? It requires >1000 deg C to deposit. Atomic Precision Systems has developed the world's first low-temperature SiC deposition process, capable of depositing a-SiC on plastic or 6H-SiC on silicon at less than 600 deg C.

Atomic Precision is looking for industrial partners and strategic investment to bring GaN and SiC to market.

Interested in working together?

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